november 2011 doc id 018938 rev 2 1/9 9 spv1001n cool bypass switch for photovoltaic applications features spv1001n30 i f =12.5 a, v r =30 v SPV1001N40 i f =12.5 a, v r =40 v very low forward voltage drop very low reverse leakage current 150 c operating junction temperature applications photovoltaic panels description the spv1001n is a system-in-package solution for photovoltaic applications to perform cool bypass rectification si milar to that of a conventional schottky diode but with much lower forward voltage drop and reverse leakage current. the device consists of a power mosfet transistor which charges a capacitor during the off time, and drives its gate during the on time using the charge previously stored in the capacitor. the on and off times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. pqfn 5 x 6 mm anodo catodo table 1. device summary order codes package packaging spv1001n30 pqfn 5 x 6 mm tape and reel SPV1001N40 www.st.com
maximum ratings spv1001n 2/9 doc id 018938 rev 2 1 maximum ratings 1.1 absolute maximum ratings 1.2 thermal data table 2. absolute maximum ratings symbol parameter value unit spv1001n30 SPV1001N40 v r max dc reverse voltage 30 40 v i f max forward current 12.5 12.5 a i fsm non repetitive peak surge (half-wave, single phase 50-60 hz) 250 250 a esd level human body level 8 k 8 k v table 3. thermal data symbol parameter value unit t j junction temperature operating range -40 to 150 -40 to 150 c t stg storage temperature range -40 to 150 -40 to 150 c r thjc thermal resistance, junction-to-case 4 4 c/w
spv1001n electrical characteristics doc id 018938 rev 2 3/9 2 electrical characteristics note: for correct power dissipation and heatsink sizing, please refer to figure 1 , 2 e 4 table 4. electrical characteristics symbol parameter test conditions spv1001 n30 spv1001 n40 unit min. typ. max. min. typ. max. v f, av g avg forward voltage drop if = 10a t j = 25c - 120 - - 140 - mv if = 5a t j = 25c-70 - -85 -mv t j = 125c - 240 - - 280 - mv i r reverse leakage current vr = 30v t j = 25c - 1 - - 1 - a t j = 125c - 10 - - 10 - a d ton/t ratio if = 5a t j = 25c - 95% - - 95% - - t j = 125c - 75% - - 75% - - v f forward voltage drop if = 5a, t off t j = 25c - 850 - - 850 - mv t j = 125c - 600 - - 600 - mv if = 5a, t on t j = 25c-35 - -40 -mv t j = 125c - 135 - - 160 - mv
device description spv1001n 4/9 doc id 018938 rev 2 3 device description a photovoltaic panel consists of a series of pv cells. in optimal conditions, all the cells are equally irradiated and function at the same current level. however, during normal operation some cells may become partially shaded or ob scured. these shaded cells limit the current generated by the fully irradiated cells and, in the extreme cases where these cells are totally obscured, the current flow is blocked. in this case the shaded cells behave like a load, and the current generated from the fully irradiated cells produces overvoltages which can reach the breakdown threshold. this phenomenon, known as a ?hot spot?, can cause overheating of the shaded cells and, in some cases, even permanent damage resulting in current leakage. to prevent hot spots, therefore, bypass diodes are connected in parallel to the cell strings. the device described here has the same functionality as a schottky diode, but with improved performance. it features very low forward voltage drop and reverse leakage current. it consists of a power mosfet transistor which charges a capacitor during the off time, and drives its gate during the on time using the charge previously stored in the capacitor. the on and off times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation.
spv1001n device description doc id 018938 rev 2 5/9 figure 1. average forward power dissipation vs average forward current @ 25c of ambient temperature figure 2. average forward power dissipation vs average forward current @ 75c of ambient temperature ? ? e ? ??e?????e? u? x? u? ?u? ?x? u? " . w 1 < 8 > ! ? $ * < " > & q p y z q s j o u f e c p b s e ' 3
$ v ? n " . w x? x? ? ?x? ? ?x? ? ? e ? ? ? ? ? e u? x?u? ? u? ?x? u? * < " > 1 < 8 > ! ? $ & q p y z q s j o u f e c p b s e ' 3
$ v ? n figure 3. reverse current figure 4. thermal resistance junction-to- ambient vs copper surface under tab (1) 1. epoxy printed board fr4, cu = 35 m ! - v 4
? # 4 ? # 4 ? # 4 ? # 4 ? # x ? ? ? ? ? ? ? ? e e ? ? ? " 7 ! - v 6 f p e 5 ? & : w k m d
package mechanical data spv1001n 6/9 doc id 018938 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 5. pqfn 5 x 6 mm mechanical data dim. mm min. typ. max. a 0.85 0.80 0.95 a1 0.02 0 0.05 d5.00 d2 4.26 4.16 4.36 e6.00 e2 2.50 2.40 2.60 e1.27 l 1.20 1.10 1.30 l1 0.30 nxb 0.45
spv1001n package mechanical data doc id 018938 rev 2 7/9 figure 5. pqfn 5 x 6 mm drawing
revision history spv1001n 8/9 doc id 018938 rev 2 5 revision history table 6. document revision history date revision changes 20-jun-2011 1 initial release 16-nov-2011 2 updated figure 3
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